Onsemi has introduced its latest silicon carbide technology platform, EliteSiC M3e MOSFETs. The company plans to release multiple additional generations through 2030. The EliteSiC M3e MOSFETs are designed to enable the performance and reliability of next-generation electrical systems at a lower cost per kW.
This will influence the adoption and effectiveness of electrification initiatives. The platform can operate at higher switching frequencies and voltages while minimizing power conversion losses. It is essential for automotive and industrial applications such as electric vehicle powertrains, DC fast chargers, solar inverters, and energy storage solutions.
The EliteSiC M3e MOSFETs are also designed to enable the transition to more efficient, higher-power data centers. This will help meet the increasing energy demands that power a sustainable artificial intelligence engine. Onsemi’s unique design engineering and manufacturing capabilities allow the EliteSiC M3e MOSFETs to reduce conduction losses by 30% and turn-off losses by up to 50% compared to previous generations.
Introducing EliteSiC M3e technology
The 1200V M3e die is packaged in onsemi’s discrete and power modules, delivering more phase current than previous EliteSiC technology. This results in approximately 20% more output power in the same traction inverter housing.
Alternatively, a fixed power level can now be designed with 20% less SiC content, saving costs while enabling the design of smaller, lighter, and more reliable systems. Onsemi provides a broader portfolio of intelligent power technologies including gate drivers, DC-DC converters, e-Fuses, and more to pair with the EliteSiC M3e platform. The end-to-end onsemi combination of optimized, co-engineered power switches, drivers, and controllers support advanced features via integration, lowering overall system cost.
By applying the concepts of Moore’s Law to the development of silicon carbide, onsemi can develop multiple generations in parallel and accelerate its roadmap to bring several new EliteSiC products to market at an accelerated pace through 2030. “We are applying our decades of experience in power semiconductors to push the boundaries of speed and innovation in our engineering and manufacturing capabilities to meet the rising global energy demands,” said Dr. Mrinal Das, senior director of technical marketing, Power Solutions Group, onsemi.
The EliteSiC M3e MOSFET in the industry-standard TO-247-4L package is now sampling.
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